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| inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor BUW90 description high current capability fast switching speed low saturation voltage and high gain applications designed for use in high frequency and efficiency converters such as motor controllers and industrial equipment such as: switching regulators motor control high frequency and efficiency converters absolute maximum ratings(ta=25 ) symbol parameter value unit v cev collector-emitter voltage (v be = -1.5v) 250 v v ceo collector-emitter voltage 125 v v ebo emitter-base voltage 7 v i c collector current-continuous 20 a i cm collector current-peak 30 a i b base current-continuous 4 a i bm base current-peak 6 a p c collector power dissipation @t c =25 125 w t j junction temperature 175 t stg storage temperature range -65~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.2 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor BUW90 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a ; i b = 0; l= 25mh 125 v v (br)ebo emitter-base breakdown voltage i e = 50ma; i c = 0 7 v v ce (sat)-1 collector-emitter saturation voltage i c = 5.5a; i b = 0.35a 0.8 v v ce (sat)-2 collector-emitter saturation voltage i c = 11a; i b = 1.1a 0.9 v v be (sat) base-emitter saturation voltage i c = 11a; i b = 1.1a 1.6 v i cer collector cutoff current v ce = v cev ;r be = 10 v ce = v cex ;r be = 10 ; t c =100 1.0 5.0 ma i cev collector cutoff current v ce = v cev ; v be = -1.5v v ce = v cev ; v be = -1.5v;t c =100 1.0 5.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 ma switching times; resistive load t r rise time i c = 15a; i b1 = 1.8a; v cc = 100v; v bb = -5v; r b2 = 1.3 ; t p = 30 s 1.0 s t s storage time 1.0 s t f fall time 0.3 s |
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